I-SiC Substrate
Inkcazo
I-Silicon carbide (i-SiC) i-binary compound yeQela le-IV-IV, yiyona nto i-slid solid compound kwi-Group IV ye-Periodic Table, Yinto ebalulekileyo ye-semiconductor.I-SiC ineepropathi ezigqwesileyo zobushushu, oomatshini, iikhemikhali kunye nombane, ezenza ukuba ibe yenye yezona zinto zibalaseleyo zokwenza ubushushu obuphezulu, i-high-frequency, kunye nezixhobo zombane ezinamandla kakhulu, iSiC nayo ingasetyenziswa njenge substrate material. kwi-GaN-based blue-emitting diode ezikhanyayo.Okwangoku, i-4H-SiC yimveliso eqhelekileyo kwimarike, kwaye uhlobo lwe-conductivity luhlukaniswe ngohlobo lwe-semi-insulating kunye nohlobo lwe-N.
Iipropati
| Into | 2 intshi 4H N-uhlobo | ||
| Ububanzi | 2 intshi (50.8mm) | ||
| Ukutyeba | 350+/-25um | ||
| Ukuqhelaniswa | Susa i-axis 4.0˚ ukuya <1120> ± 0.5˚ | ||
| Ukuqhelaniswa neFlethi okuPhambili | <1-100> ± 5 ° | ||
| IFlethi yesibini Ukuqhelaniswa | 90.0˚ CW ukusuka kwiFlathi yasePrayimari ± 5.0˚, Si Ubuso phezulu | ||
| Ubude beFlethi obuPhambili | 16 ± 2.0 | ||
| Ubude beFlethi yesibini | 8 ± 2.0 | ||
| IBanga | Ibakala lemveliso (P) | Ibakala lophando (R) | Ibakala leDummy (D) |
| Ukuxhathisa | 0.015~0.028 Ω·cm | < 0.1 Ω·cm | < 0.1 Ω·cm |
| Ukuxinana kweMibhobho | ≤ I-micropipes e-1/cm² | ≤ I-1 0micropipes/cm² | ≤ 30 imicropipes/cm² |
| Uburhabaxa boMphezulu | Si ubuso CMP Ra <0.5nm, C Face Ra <1 nm | N/A, indawo enokusetyenziswa > 75% | |
| TTV | < 8 um | <10um | < 15 um |
| Ukuqubuda | < ± 8 um | < ± 10um | < ± 15um |
| I-Wap | < 15 um | <20 um | < 25 um |
| Iintanda | Akukho nanye | Ubude obongezelekayo ≤ 3 mm | Ubude obongezelelweyo ≤10mm, |
| Imikrwelo | ≤ Imikrwelo emi-3, eyongezelekayo | ≤ Imikrwelo emi-5, eyongezelekayo | ≤ Imikrwelo eyi-10, eyongezelekayo |
| Iipleyiti zeHex | ubuninzi beepleyiti ezi-6, | ubuninzi beepleyiti ezili-12, | N/A, indawo enokusetyenziswa > 75% |
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo ≤ 5% | Indawo eyongezelekayo ≤ 10% |
| Usulelo | Akukho nanye | ||
