PMN-PT Substrate
Inkcazo
Ikristale ye-PMN-PT yaziwa ngokuba yi-electromechanical coefficient ephezulu kakhulu yokudibanisa, i-piezoelectric coefficient ephezulu, uxinzelelo oluphezulu kunye nelahleko ephantsi ye-dielectric.
Iipropati
| Ukuqulunqwa kwemichiza | ( PbMg 0.33 Nb 0.67)1-x: (PbTiO3)x |
| Ulwakhiwo | R3m, eRhombohedral |
| Ileyithi | a0 ~ 4.024Å |
| Indawo yokunyibilika (℃) | 1280 |
| Ubuninzi (g/cm3) | 8.1 |
| I-Piezoelectric Coefficient d33 | >2000 pC/N |
| Ilahleko yeDielectric | ubungakanani <0.9 |
| Ukuqamba | kufutshane nomda wesigaba se-morphotropic |
PMN-PT Substrate Inkcazo
Isubstrate ye-PMN-PT ibhekisa kwifilim ebhityileyo okanye iwafer eyenziwe ngemathiriyeli yepiezoelectric PMN-PT.Isebenza njengesiseko esixhasayo okanye isiseko sezixhobo ezahlukeneyo ze-elektroniki okanye ze-optoelectronic.
Kumxholo we-PMN-PT, i-substrate ngokuqhelekileyo yindawo ethe tyaba eqinileyo apho iileya ezibhityileyo okanye izakhiwo zinokukhuliswa okanye zifakwe khona.Iisubstrates ze-PMN-PT ziqhele ukusetyenziselwa ukwenza izixhobo ezifana ne-piezoelectric sensors, actuators, transducers, kunye nezivuni zamandla.
Ezi substrates zibonelela ngeqonga elizinzileyo lokukhula okanye ukubekwa kweengqimba ezongezelelweyo okanye izakhiwo, ezivumela iimpawu ze-piezoelectric ze-PMN-PT ukuba zifakwe kwizixhobo.Ifilimu encinci okanye i-wafer form ye-PMN-PT substrates inokudala izixhobo ezidibeneyo kunye nezisebenzayo ezixhamla kwiipropati ze-piezoelectric ezigqwesileyo.
Iimveliso ezinxulumeneyo
Ukuthelekisa i-lattice ephezulu kubhekiselele kukulungelelaniswa okanye ukuhambelana kwezakhiwo zeeletisi phakathi kwezinto ezimbini ezahlukeneyo.Kumxholo we-MCT (i-mercury cadmium telluride) i-semiconductors, ukuhambelana kwe-lattice ephezulu kuyanqweneleka kuba ivumela ukukhula komgangatho ophezulu, i-epitaxial layers engenasiphako.
I-MCT yimpahla ye-semiconductor edibeneyo esetyenziswa rhoqo kwii-infrared detectors kunye nezixhobo zokucinga.Ukwandisa ukusebenza kwesixhobo, kubalulekile ukukhulisa i-MCT epitaxial layers ehambelana ngokusondeleyo ne-lattice structure ye-substrate material ephantsi (ngokuqhelekileyo i-CdZnTe okanye i-GaAs).
Ngokufezekisa ukulinganisa okuphezulu kwe-lattice, ukulungelelaniswa kwekristale phakathi kweengqimba kuphuculwe, kwaye iziphene kunye noxinzelelo kwi-interface iyancitshiswa.Oku kukhokelela kumgangatho ongcono wekristale, ukuphuculwa kweepropathi zombane kunye nokukhanya, kunye nokusebenza okuphuculweyo kwesixhobo.
Ukuthelekisa i-lattice ephezulu kubalulekile kwizicelo ezifana ne-infrared imaging kunye nokuziva, apho iziphene ezincinci okanye ukungafezeki kunokuthi kuthobe ukusebenza kwesixhobo, okuchaphazela izinto ezifana nobuntununtunu, isisombululo sesithuba, kunye nomlinganiselo wesignali ukuya kwingxolo.
