I-GaAs Substrate
Inkcazo
I-Gallium Arsenide (GaAs) liqela elibalulekileyo neliqolileyo i-III-Ⅴ i-semiconductor yekhompawundi, isetyenziswa ngokubanzi kwintsimi ye-optoelectronics kunye ne-microelectronics.I-GaAs yohlulwe kakhulu ibe ngamacandelo amabini: i-semi-insulating GaAs kunye ne-N-type GaAs.I-semi-insulating GaAs isetyenziselwa ikakhulu ukwenza iisekethe ezidibeneyo kunye ne-MESFET, i-HEMT kunye nezakhiwo ze-HBT, ezisetyenziswa kwi-radar, i-microwave kunye ne-millimeter yonxibelelwano lwamaza, iikhomputha ze-ultra-high-speed kunye nonxibelelwano lwefiber optical.Ii-GaAs zohlobo lwe-N zisetyenziswa kakhulu kwi-LD, i-LED, kufuphi ne-laser ye-infrared, i-quantum kakuhle i-laser yamandla aphezulu kunye neeseli zelanga eziphezulu.
Iipropati
| Ikristale | Doped | Uhlobo lokuqhuba | Ugxininiso lweMiqukuqela cm-3 | Ubuninzi cm-2 | Indlela Yokukhula |
| IiGaAs | Akukho nanye | Si | / | <5×105 | I-LEC |
| Si | N | >5×1017 | |||
| Cr | Si | / | |||
| Fe | N | ~2×1018 | |||
| Zn | P | >5×1017 |
GaAs Substrate Inkcazo
I-GaAs substrate ibhekisela kwi-substrate eyenziwe nge-gallium arsenide (GaAs) imathiriyeli yekristale.I-GaAs yi-semiconductor edibeneyo eyenziwe nge-gallium (Ga) kunye ne-arsenic (As) izinto.
Ii-substrates ze-GaAs zihlala zisetyenziswa kwimimandla ye-electronics kunye ne-optoelectronics ngenxa yeempawu zabo ezintle.Ezinye iipropati eziphambili ze-GaAs substrates ziquka:
1. Ukuhamba kwe-electron ephezulu: I-GaAs inokuhamba kwe-electron ephezulu kunezinye izinto eziqhelekileyo ze-semiconductor ezifana ne-silicon (Si).Olu phawu lwenza i-substrate ye-GaAs ilungele izixhobo zombane ezisebenza ngamandla aphezulu.
2. I-gap yebhendi ethe ngqo: I-GaAs ine-gap yebhendi ngokuthe ngqo, oku kuthetha ukuba ukukhutshwa kokukhanya okusebenzayo kunokwenzeka xa i-electron kunye nemingxuma iphinda ihlangane.Olu phawu lwenza ukuba ii-GaAs substrates zilungele ukusetyenziswa kwe-optoelectronic ezifana ne-light emitting diodes (LEDs) kunye ne-laser.
3. I-Bandgap ebanzi: I-GaAs ine-bandgap ebanzi kune-silicon, eyenza ukuba isebenze kumaqondo aphezulu aphezulu.Le propati ivumela izixhobo ezisekelwe kwi-GaAs ukuba zisebenze ngokufanelekileyo kwiindawo eziphezulu zokushisa.
4. Ingxolo ephantsi: Ii-substrates ze-GaAs zibonisa amanqanaba engxolo aphantsi, ezenza ukuba zilungele izikhulisa-ngxolo eziphantsi kunye nezinye izicelo ezibuthathaka ze-elektroniki.
Ii-substrates ze-GaAs zisetyenziswa ngokubanzi kwizixhobo ze-elektroniki kunye ne-optoelectronic, kubandakanywa i-transistors enesantya esiphezulu, i-microwave edibeneyo i-circuits (ICs), iiseli ze-photovoltaic, i-photon detectors, kunye neeseli zelanga.
Ezi substrates zingalungiswa ngokusebenzisa iindlela ezahlukeneyo ezifana Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) okanye Liquid Phase Epitaxy (LPE).Indlela ethile yokukhula esetyenzisiweyo ixhomekeke kwisicelo esifunwayo kunye neemfuno zomgangatho we-substrate ye-GaAs.
